Lehigh maintains one of the most comprehensive electron microscopy facilities in the U.S., with a suite of 9 scanning, transmission and scanning/transmission (SEM, TEM & STEM) instruments. These are well suited for characterizing nanoscale structures and chemistry via an unparalleled range of imaging and analytical methods. Moreover, the facility houses the world’s highest resolution analytical electron microscope—an instrument custom designed for nanoscale analysis and atomic resolution imaging. Support services include specimen preparation facilities, thin film coatings, ion beam polishing, plasma cleaners, electrochemical jet polishers, dimplers, wire saws, diamond cutting wheels and a comprehensive metallographic suite. In addition, there are facilities for digital image acquisition and manipulation, offline computers for data analysis, and extensive microscopy-related software. In certain situations, Lehigh personnel can work with users to make modifications to instruments for specific applications. The facilities also feature an electron-beam lithography system, as well as a versatile Focused Ion Beam (FIB) instrument for nanofabrication of photonic crystals and optoelectronic devices.
Lehigh is also home to two state-of-the-art surface characterization instruments. A high-sensitivity low energy ion scattering (HS-LEIS) system enables elemental quantification with monolayer precision. Additionally, a newly installed near-ambient pressure x-ray photoemission spectroscopy (NAP-XPS) system can be used for chemical and elemental analysis of materials under operational conditions. Both instruments are outfitted with a variety of sample preparation capabilities, including heating, gas dosing, in situ cleaving, and argon sputter sources.
Lehigh Electron Microscopy
Lehigh Surface Characterization
III-V and Silicon-based nanofabrication cleanrooms are integrated into a single facility, supporting research and development in microfabrication techniques and device fabrication. The cleanroom facility includes photo-lithography (Karl Suss MA-6), intermixing/contact annealing (RTA), III-V and dielectric etchers (RIE), SiO2 and Si3N4 deposition (PECVD), metallization and AR/HR (e-beam evaporator and sputtering), holography system (grating formation for DFB/DBR lasers), wet etching, wafer thinning, laser scribing, and basic laser packaging.