Deposition and sputtering

AJA International ATC 2200 Sputter Deposition Chamber

Our AJA sputtering chamber is configured confocally with 3 sputtering sources with both DC and RF power supplies installed. The chamber can accommodate single pieces up to 3 inches. With both DC and RF sources, a wide range of materials can be deposited including metals, alloys, and dielectrics. Reactive gas sputtering with a partial pressure of O₂ or N₂ allows for precise compositional control when preparing oxide or nitride films. Co-deposition of up to 3 materials is achievable, enabling custom alloy development and accelerated deposition rates.

Eddy SC 20 E-beam Evaporator

The Eddy E beam metal system is a 4-pocket metal evaporator capable of depositing up to 4 different metals in a single run, without breaking vacuum. A real-time thickness monitor with sub-angstrom resolution ensures that deposited films meet stringent research specifications. Deposition rates as low as 0.1 Å/s are achievable for exceptional control. Available materials include Ag, Au, Cr, Cu, Ge, Fe, ITO, Mo, Ni, Pt, Si, and Ti. Other materials may be available upon request.

VEECO P-75 GaN based MOCVD Reactor

The P-75 MOCVD reactor provides us capabilities to pursue research on AlInGaN materials and devices for optoelectronics and nanostructures. The reactor is equipped with 6 metalorganic sources (TMIn, TMGa, TEGa, TMAl, Scandium and Cp₂Mg), and is capable of growing compound semiconductor materials containing In, Ga, Al, Sc and N. Dopant species of Mg and Si are available for device applications. The P-75 reactor is also used to pursue research on low-cost and compact deep-UV light sources using AlInGaN semiconductor nanostructures, efficient white-light LEDs, InGaN and AlScN semiconductor nanostructure optoelectronics, GaN-based electronics devices, and InN- based semiconductor thin film and nanostructures.

VEECO D-125 GaAs/InP based MOCVD Reactor

The D-125 MOCVD system is dedicated for optoelectronics and nanostructure research on GaAs/InP substrates. The D-125 MOCVD reactor has been customized for 12 metalorganic sources (2x TMGa, 2x TMIn, 2x TMAl, TMSb, UDMhy, TBP, TBA, DEZn, and CBr₄), which allows the versatile growth of novel and new semiconductor material system. The reactor is capable of growing compound semiconductor materials containing In, Ga, Al, As, P, Sb, and N. Elements of Zn, C, and Si are also available in the D-125 reactor for doping purposes.

Plasmatherm 790 PECVD

The Plasmatherm 790 is a flexible parallel plate Plasma Enhanced Chemical Vapor Deposition system capable of processing sample sizes up to 6 inches. This tool can prepare silicon oxide and silicon nitride films using temperatures ranging from 80 °C – 400 °C. Available gas chemistries include N₂O, CF₄, SiH₄, NH₃, and N₂.